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Magnetron source | 2-inch targets
Magnetron source for applying thin layers with high homogeneity in the sputtering process. Intended for 2-inches diameter targets.
- Description
- Source Type B
- Source Type c
- Features
- Options
Description
Depending on the required conditions of the sputtering process, we offer 2 types of sources: type B & C.
All types are fully compatible with our M600DC-PS power supply as well as all other DC, RF and pulsed DC power supplies available on the market.
The magnetron source type B is used to apply thin layers with high homogeneity in the sputtering process. The source is compatible with UHV conditions. The source is designed for sputtering magnetic and ferromagnetic materials. It can operate on up to 7 mm thick targets.
| Mounting flange | DN 63 CF |
| Max. power (DC mode) | 400 W DC ** |
| Max. power (RF mode) | 400 W RF ** |
| Max. voltage DC | 1200 V |
| Connector DC/RF | type 7/16 |
| Target | |
| form | ring |
| diameter | 2″ (50.8 mm) ± 0.2 mm |
| thickness | 1 – 7 mm (magnetic & non-magnetic) |
| cooling | indirect |
| Water flow | min. 1 l/min |
| Max. inlet water temperature | < 28 °C |
| Max. water pressure | 3 bar |
| Tubing diameter | Ø6×1 mm PTFE |
| Magnet material | Samarium Cobalt (SmCo) |
| Magnet max. temperature | 350°C |
| Internal pneumatic shutter | yes |
| Shutter type | dome type or flat swing |
| Insitu tilt module | yes, range +45° ÷ -10° |
| Chimney | yes |
| Dedicated materials: | |
| typical rates [nm/min] for 200 W: | |
| Cu | 32,84 nm/min ( distance: 160 mm; target thickness: 3 mm)*** |
| Ti | 10,07 nm/min (distance: 160 mm; target thickness: 3 mm)*** |
| Fe | 9,63 nm/min (distance: 160 mm; target thickness: 3 mm)*** |
| Internal gas inlet | yes (VCR standard) |
| Working gas | Ar |
| Max. working pressure | 5×10-3 – 1×10-1 mbar |
| Optimal working pressure | 5×10-3 – 5×10-2 mbar |
* Other mounting flanges on request
** The maximum power is determined by the target material
*** Distances depend on the geometry of the chamber and the magnetrons
The magnetron source type C is both RF‑ and DC‑compatible and can deposit many classes of materials: conductors, semiconductors, and insulators. The source enables the creation of uniform, homogeneous and small-grained thin films; with such advantages as high density (low void area), high specularity (reflectance), and free of radiation damage and broken bonds.
| Mounting flange | DN 63CF or DN 63ISO‑K for model MS2/63C1, or DN 100CF or DN 100ISO‑K for model MS2/100C1 |
| Max. power (DC mode) | 400 W DC ** |
| Max. power (RF mode) | 400 W RF ** |
| Max. voltage DC | 1200 V |
| Connector DC/RF | type 7/16 |
| Target | Keeper standard |
| form | circular |
| diameter | 2″ (50.8 mm) ± 0.2 mm |
| thickness | non-magnetic: 1-6 mm; magnetic: Fe 1mm, Ni 1mm |
| cooling | indirect |
| Water flow | min. 1 l/min |
| Max. inlet water temperature | < 28 °C |
| Max. water pressure | 3 bar |
| Tubing diameter | Ø6×1 mm PTFE |
| Magnet material | Neodymium Iron Boride (NdFeB) |
| Magnet max. temperature | 200 °C |
| Internal pneumatic shutter | yes |
| Shutter type | dome type or flat swing |
| Insitu tilt module | yes, range +45° ÷ -10° |
| Chimney | yes |
| Dedicated materials: | |
| typical rates [nm/min] for 200 W: | |
| Cu | 34,70 nm/min (distance: 100 mm; target thickness: 3 mm)*** |
| Ti | 6,8 nm/min (distance: 100 mm; target thickness: 3 mm)*** |
| Fe | 32,41 nm/min (distance: 100 mm; target thickness: 1 mm)*** |
| Internal gas inlet | yes (VCR standard) |
| Working gas | Ar |
| Max. working pressure | 5×10-3 – 1×10-1 mbar |
| Optimal working pressure | 5×10-3 – 5×10-2 mbar |
* Other mounting flanges on request
** The maximum power is determined by the target material
*** Distances depend on the geometry of the chamber and the magnetrons
- With or without insitu tilt module
- Range of mounting flanges
- Chimney as standard
- Pneumatic dome type or side swing shutter
- Indirectly cooled
- Mass Flow Controller (MKS MF1)
- Customized length
- Z manipulator
