Sputtering RF and DC Magnetrons

Description

There are two specific methods of Sputtering.

DC Sputtering

Also known as Direct Current Diode Sputtering and it is the most basic type of sputtering. Ionized Argon cations are accelerated towards the cathode with the use of a negative bias voltage. Upon the collision of Argon with the cathode (where the target material is placed), species from the target source are ejected and subsequently get deposited on the substrate.

RF Sputtering

It is ideal for use with electrically insulating or dielectric target materials or substrates such as ceramics. It allows a much lower Argon pressure than the DC counterpart (1-15 mTorr vs 100 mTorr) to be used, which in turn reduces the concentration of gas impurities and in the chamber while also improving the deposition’s line of sight due to fewer gas collisions.

Magnetron Sputtering

This sputtering feature greatly increases the sputtering rate by concentrating ions and electrons in a confined region above the cathode. By trapping electrons near the target material using a magnetic field, the ionization of Argon is greatly increased while also further lowering the gas pressure to 0.5 mTorr to improve the deposition’s line of sight even more.

The characteristics above offer improved deposition rate decreased impurities of coatings and allow for operating under lower substrate temperatures in depositions. This type of sputtering can be used in conjunction with a DC or RF power source.

Vac Techniche has developed a single style magnetron that is compatible for both DC and RF power sources, they are manufactured to work effortlessly with the Vac Techniche plasma power sources.

Wide Uniform Erosion Area results in stable operation, minimal distribution & uniformity/rate changes throughout the target lifetime.

• Active Plasma Discharge on nearly entire target surface keeps target clean & reduces insulating film growth that leads to arcing.
• External manifolds & other plasma disturbing hardware that increases required periodic maintenance frequency is unnecessary.
• Available in 2” Diameter Targets.
• Internal and Flange Mount Configurations.
• Can be Used in DC, Pulsed DC, RF Modes.
• 70-90 W t% Target Utilization
• Fully Stochiometric Dielectric Materials at Low Pressures & Temperatures.
• 20% Higher rates due to broad erosion area & highly efficient cooling.